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Application Note AN-027

What Is Battery Internal Resistance?

Summary

Internal resistance combines ohmic, SEI, charge-transfer and diffusion contributions that appear on different timescales, so the measured value depends on the method. This note explains what ACIR, DCIR and R0 actually mean, and how to measure them on Arbin systems with the built-in Internal resistance step or an IEC 61960 schedule.

1Why Internal Resistance Matters

Internal resistance is one of the most informative single parameters of a battery cell. It determines how much the voltage drops under load, how much heat the cell generates, and how much power it can deliver. Yet internal resistance values reported by different instruments, standards and datasheets often disagree, because the term covers several physical processes that act on different timescales, and the measured value depends strongly on how and when the voltage is read [1].

This note explains what internal resistance consists of, how the measurement method affects the result, and how to perform reliable measurements on Arbin systems — using either the built-in Internal resistance control step or a user-programmed IEC 61960 procedure.

1.1What Internal Resistance Decides

  • Power capability and voltage sag. The voltage drop under load is roughly I × R. A higher resistance means the cell reaches its cut-off voltage sooner at high current, reducing usable capacity and peak power.
  • Heat generation and safety. Resistive losses produce heat proportional to I² × R, so doubling the current quadruples the heat. This drives thermal management design, and high temperatures accelerate aging and can ultimately trigger thermal runaway.
  • Efficiency. Energy lost as heat in the internal resistance lowers round-trip efficiency, because that energy never reaches the load or gets stored.
  • State of health and aging. Resistance rises as a cell ages, mainly because the SEI layer thickens, the electrolyte slowly decomposes and electrode particles lose contact with each other [2].
  • Cell matching. In parallel, more current flows through the lower-resistance cell, so it works harder; in series, the higher-resistance cell heats more and reaches its voltage limits first. Matched resistance keeps cells aging evenly [7].
  • Quality control. Manufacturing defects, poor welds and damaged cells add resistance in the current path, so an abnormal value is an early warning sign.
  • Modeling. A battery management system needs R to separate the current-induced voltage drop from the OCV, which is what indicates state of charge.

2Fundamentals

2.1Basic Definition

When no current flows, a battery’s terminal voltage equals its open-circuit voltage (OCV). When a current I flows, the terminal voltage changes to Vload. In the simplest model, the battery is an ideal voltage source (OCV) in series with a resistor R:

R  =  ( OCV − Vload )  /  I

For example, a cell at 4.00 V open-circuit that drops to 3.90 V while delivering 2 A has R = 0.10 V / 2 A = 50 mΩ. In this note, I is taken as positive for discharge, so Vload is below OCV; for a charge pulse, taking I as negative keeps the formula valid.

This model is a useful starting point, but a real battery is not just a resistor: several internal processes respond to current on different timescales, so the measured value depends on when the voltage is read, the state of charge, the temperature and how the measurement is made.

2.2Components of Internal Impedance

Strictly speaking, a battery has an internal impedance made of several contributions that act on different timescales.

Table 1. Contributions to the internal impedance of a lithium-ion cell

ContributionPhysical originTypical timescale
Ohmic resistance R0Electrolyte, separator, electrodes, current collectors, tabsInstantaneous
SEI resistanceIon transport through the solid electrolyte interphase film on the anode; grows with agingSub-millisecond to milliseconds
Charge-transfer resistanceElectrochemical reactions at the electrode surfaces (with double-layer capacitance)Milliseconds to about 1 s
DiffusionLimited ion transport through the electrodes and electrolyteSeconds to minutes, growing with pulse length

Battery models usually represent the cell as R0 in series with one or more RC pairs, each capturing one of the slower effects [3]. When current starts, the voltage drops instantly by I × R0, then continues to sag gradually, because the capacitor in each RC pair takes time to charge with a time constant τ = R × C. Physically, diffusion is better described by a Warburg element, which has no single time constant because ions diffuse over a continuous range of distances into the electrode particles; RC pairs are a practical approximation of it [4].

3Internal Resistance Values and How They Differ

Because “internal resistance” is used loosely, a quoted value is only meaningful together with how it was measured [1].

Table 2. Common types of internal resistance values

ValueHow it is measuredWhat it includes
AC internal resistance (ACIR)Small AC signal, typically at 1 kHzClose to R0; each 1 ms cycle reverses the current before charge transfer and diffusion can build up
DC internal resistance (DCIR)Current pulse, voltage read at a specified timeR0 plus the polarization that develops during the pulse; often significantly larger than R0, especially in the cold
Electrochemical impedance spectroscopy (EIS)AC signal swept across a range of frequenciesSeparates all contributions, because each process responds in its own frequency range [4]

R0 describes the instantaneous voltage drop. DCIR at a relevant pulse length is more useful for predicting voltage sag and power capability, because real loads last seconds or longer — long enough for polarization to add to the drop.

3.1DCIR Depends on Pulse Length

DCIR is not a single fixed property of the battery. It includes R0 plus whatever polarization has built up by the moment the voltage is read.

Table 3. Contributions included in a DCIR value as a function of pulse length

Pulse lengthContributions included
About 1 msApproximately R0; the fastest SEI and charge-transfer processes may already contribute slightly
About 0.1 to 1 sR0 plus most or all of the charge-transfer resistance
10 s or longerR0 plus charge transfer plus a growing diffusion contribution
Reporting

A DCIR value must always be reported with its conditions — for example “DCIR at 10 s pulse, 50% SOC, 25 °C”. Resistance rises at low temperature, because ion transport and reactions slow down, and near empty or full charge, because fewer reaction sites are available.

4Measuring the Ohmic Resistance R0

An accurate, repeatable R0 measurement follows these steps.

  1. Rest the cell until the voltage has fully relaxed (often one hour or more), because concentration differences left by earlier current take a long time to even out through diffusion. For chemistries with OCV hysteresis, such as LFP, approach the test SOC from a consistent direction, because the relaxed OCV depends on whether the cell was last charged or discharged.
  2. Fix and record the conditions. Test at a known temperature and state of charge, because the resistance depends on both.
  3. Use 4-wire (Kelvin) sensing directly at the cell terminals. The sense leads carry almost no current, so wire and contact resistance are excluded from the result.
  4. Apply a short current pulse that is large enough to produce a clearly measurable voltage drop compared with the measurement resolution and noise, but short enough not to change the state of charge or heat the cell.
  5. Read Vload as soon as the current has stabilized, typically within about 1 ms. Reading earlier captures the switching transient from cable inductance and the load’s rise time; reading later adds polarization. At this point the reading is a close approximation of R0, not a pure measurement.
  6. Calculate R0 = (OCV − Vload) / I.
Arbin

Arbin LBT systems use 4-wire (Kelvin) connections by default, measure with 24-bit resolution and low noise — so the pulse can be kept small — and log data at 1 kHz as standard (one point every 1 ms). A 10 kHz burst mode (one point every 0.1 ms) captures the voltage step in finer detail.

4.1Cross-Check: Current Interruption

The same R0 can be measured when the current is switched off. While current I flows, the voltage sits at Vload; when the current is cut, the voltage first jumps quickly by the ohmic part, then creeps slowly toward OCV as polarization relaxes:

R0  =  ( Vafter − Vload )  /  I
Vafter is the voltage just after the switch-off transient has settled, typically within about 1 ms — not the fully relaxed OCV.

If the switch-on and switch-off results agree, the measurement is likely sound, because errors such as a wrong sampling time or a poor connection usually affect the two edges differently.

5The Two-Current Method and IEC 61960

5.1Principle

The two-current method avoids the need for an accurate OCV. The cell is discharged at a first current I1 and then at a second, higher current I2, and the voltage is recorded at the end of each step. In the simple model, V1 = E − I1 × R and V2 = E − I2 × R, where E is the cell’s underlying source voltage. Because E is the same in both readings, it cancels when the two equations are subtracted:

R  =  ( V1 − V2 )  /  ( I2 − I1 )

The formula only requires the two currents to differ, but the low-then-high order is used for three reasons: a large current step gives a large voltage difference, keeping meter resolution and noise small relative to the signal; the longer low-current step brings the cell to a steady, mildly polarized state first, so the short high pulse is a clean response on top of it rather than a reading disturbed by relaxation; and the short high pulse limits heating and state-of-charge change, which would otherwise change E between the two readings.

5.2Why Both Steps Are Discharge Steps

  • Charge and discharge resistance differ. The electrode reactions run in opposite directions and do not proceed equally easily both ways. With two discharge steps, one resistance applies to both readings, as the formula assumes.
  • Polarization builds in one direction. The second step adds polarization on top of the first, instead of first having to reverse it.
  • The standard characterizes discharge performance, which is what matters for portable devices.
  • Cell protection. A strong charge pulse on a charged cell could exceed its maximum voltage or cause lithium plating.

5.3IEC 61960 Measurement Procedure

IEC 61960-3 (clause 7.7.3) [5] specifies the DC internal resistance as a two-step discharge at 0.2 It for 10 s followed immediately by 1.0 It for 1 s, where It is the rated capacity divided by one hour. Scaling the currents to the capacity keeps results comparable between cells of different sizes. For example, a 3 Ah cell gives It = 3 A, I1 = 0.6 A and I2 = 3 A.

  1. Preconditioning. Bring the cell to the charge state, rest time and ambient temperature specified in IEC 61960-3, typically with a charge step followed by a rest step.
  2. First discharge. Constant-current discharge at I1 = 0.2 It for 10 s ± 0.1 s. At the end of the step, record U1 and the measured current I1.
  3. Second discharge. Go directly, with no rest, to a constant-current discharge at I2 = 1.0 It for 1 s, because even a short pause would let the cell start relaxing. At the end of the step, record U2 and the measured current I2.
  4. Calculation. Use the measured rather than the set currents, so that small current deviations do not enter the result.
RDC  =  ( U1 − U2 )  /  ( I2 − I1 )

Validity checks: step 2 lasted 10 s ± 0.1 s; the transition to step 3 was immediate; I2 > I1; the voltage stayed above the minimum limit; and RDC is positive. Report RDC together with U1, U2, I1, I2, the rated capacity and the cell temperature.

Record data at intervals of 10 ms or less near the end of each step, so that the recorded end value is within about 1% of the 1 s step duration, and use 4-wire sensing. Measuring a known resistor in series with a stable power supply is a simple way to verify the setup.

Arbin

Arbin LBT systems measure current and voltage with a precision of 0.01% and an accuracy of 0.02%, so the recorded values are reliable. The standard 1 kHz logging rate (one point every 1 ms) meets the IEC timing requirement with a tenfold margin.

5.4Programming IEC 61960 on Arbin Systems

Figure 1 shows the IEC 61960 procedure programmed as a schedule in the Arbin test software (Internal_Resistance_IEC61960.sdx). Each line is one step: two C-rate discharge steps carry out the measurement, Set value steps store the measured currents and voltages in user-defined meta variables, and a final Set value step calculates the DC resistance with a formula.

IEC 61960 DC internal resistance schedule programmed in the Arbin MITS test software
Figure 1. The IEC 61960 DC internal resistance schedule in the Arbin test software.

Table 4. IEC 61960 schedule steps

IDStep labelControl typeSettingFunction
1Preconditioning_25°CRestTest setting TestStg_25CHolds the cell at 25 °C before the measurement
2First_Discharge_I1C-rate−0.2 CDischarges at I1 = 0.2 It for 10 s
3Save_I1Set valueMV_UD1 = 1 × LS_CHAN_CurrentStores the measured current at the end of step 2 as I1
4Save_V1Set valueMV_UD2 = 1 × LS_CHAN_VoltageStores the voltage at the end of the first discharge as U1
5Second_Discharge_I2C-rate−1 CDischarges at I2 = 1.0 It for 1 s
6Save_I2Set valueMV_UD3 = 1 × LS_CHAN_CurrentStores the measured current at the end of step 5 as I2
7Save_V2Set valueMV_UD4 = 1 × LS_CHAN_VoltageStores the voltage at the end of the second discharge as U2
8DCIR_IEC61960Set valueMV_UD5 = AF_DCIRCalculates RDC from the stored values with a formula

The C-rate control type scales the currents to the capacity in the cell definition, so the same schedule can be reused for cells of any size. When the cell is not already at the charge state specified in IEC 61960-3, a standard charge step and rest are added before step 1.

Arbin counts discharge current as negative, so the C-rates are entered as −0.2 C and −1 C, and I1 and I2 are stored as negative values. To obtain a positive resistance, the formula AF_DCIR uses the magnitudes of the currents:

( MV_UD2 − MV_UD4 ) / ( ABS(MV_UD3) − ABS(MV_UD1) )
Equivalent to RDC = (U1 − U2) / (|I2| − |I1|). The result is in ohms.

Step limits. Step 2 ends when PV_CHAN_Step_Time ≥ 10 s and step 5 when PV_CHAN_Step_Time ≥ 1 s, with PV_CHAN_Voltage ≤ Vmin → end as a safety limit on both. The Set value steps end at PV_CHAN_Step_Time ≥ 0, so that the second discharge follows the first without a pause.

Enter the rated capacity of the cell in the cell definition, because IEC 61960 defines It from the rated capacity. Log at DV_Time ≥ 0.01 s or faster on steps 2 and 5, so that the end-of-step values meet the timing requirement.

5.5Other Standards: HPPC

For electric and hybrid vehicle applications, one of the most widely used resistance tests is the Hybrid Pulse Power Characterization (HPPC) test, defined in the U.S. Department of Energy’s FreedomCAR Battery Test Manual [6]. It applies a 10 s discharge pulse, a 40 s rest and a 10 s regenerative (charge) pulse at 75% of the discharge current, and repeats this sequence at 10% depth-of-discharge intervals, with a one-hour rest before each sequence. The voltage change during each pulse gives both the discharge and the charge resistance as a function of state of charge. It is the same ΔV / ΔI principle as the methods above, but mapped across the full SOC range, which is why HPPC data is commonly used to parameterize battery models. HPPC can be programmed on Arbin systems with standard steps — see application note AN-024.

6Internal Resistance Measurement on Arbin Systems

6.1The Arbin Internal Resistance Step

In addition to user-programmed procedures, Arbin systems provide a dedicated Internal resistance control step based on a symmetric pulse train — a generalization of the two-current method. The current alternates between I0 + IIR and I0 − IIR, where I0 is the offset (the average current) and IIR is the pulse amplitude. The voltage is sampled at the end of a high half-cycle (P2) and at the end of the following low half-cycle (P3), and the result is averaged over 10 pulses:

IR  =  avg [ ( VP2 − VP3 ) / ( 2 × IIR ) ]
This is the two-current formula with I2 − I1 = 2 × IIR, so the source voltage cancels in the same way and no OCV measurement is needed.
Current and voltage waveforms during the Arbin Internal resistance step, with sampling points P2 and P3
Figure 2. Current and voltage during the Arbin Internal resistance step.

At each current change, the voltage steps instantly (the ohmic part), then keeps moving slowly as polarization builds. Arbin counts charging current as positive, which is why the voltage rises during the high half-cycle and VP2 − VP3 is positive. With the discharge-positive convention used in the earlier sections, the same result is written (VP3 − VP2) / (2 × IIR).

The method offers three advantages over a single pulse:

  • Zero net charge (when I0 = 0): the charge removed in each half-cycle is returned in the next, so the state of charge does not drift and concentration polarization cannot accumulate.
  • Averaging: averaging 10 pulses reduces random noise by roughly a factor of √10 ≈ 3, which matters because the voltage differences are often only a few millivolts.
  • Short pulses: the sampling time T1 equals the half-cycle width and can be set from 1 ms to 1000 ms. Short pulses keep polarization small, because it has little time to build up.
Important

The reported value is a DCIR at the sampling time T1, not a pure R0: even at 1 ms, fast SEI and charge-transfer processes may already contribute. Always report T1, IIR, I0, SOC and temperature with the result.

6.2Choosing the Offset I₀

With I0 = 0, the pulses alternate between charge and discharge, so the result is effectively an average of the charge and discharge resistance. A non-zero offset is useful in several situations:

  • Direction-specific resistance. With I0 larger than IIR, both half-cycles flow in the same direction, giving a pure charge or pure discharge resistance. Because positive current means charging, a negative I0 is needed for the discharge side.
  • Measurements during a test. Setting I0 to the current already flowing in a cycling test superimposes the pulses without interrupting it, which allows resistance to be tracked as a function of SOC.
  • Operating point. At higher currents the charge-transfer resistance becomes nonlinear, so a cell used at 2 A is best characterized around 2 A.
  • Avoiding the zero crossing. Keeping the current on one side of zero avoids switching between charge and discharge, which on some hardware adds a short transient.

With I0 ≠ 0, net charge flows during the measurement, but the effect is usually negligible: with I0 = 1 A and a measurement lasting about 0.3 s, roughly 0.09 mAh flows — about 0.003% of a 3 Ah cell.

6.3Programming an Internal Resistance Step

Each field in the step dialog corresponds directly to a parameter of the pulse train (Figure 3).

Programming an Internal resistance step in the Arbin MITS test software, showing amplitude, sampling time and offset fields
Figure 3. Programming an Internal resistance step.

Table 5. Interface fields and their meaning

Interface fieldSymbolMeaningExample value
Control type–Selects the internal resistance measurementInternal resistance
Amplitude (A)IIRCurrent step above and below the offset0.1 A
msT1Width of each half-cycle, which is also the sampling time10 ms
OffsetI0Average current around which the pulses alternate0 A
Step transitions–What the test does after the measurementGo to next step

With these values, the current alternates between +0.1 A and −0.1 A in 10 ms half-cycles, so the current difference is 0.2 A and no net charge flows. A voltage difference of 1 mV between P2 and P3 corresponds to IR = 1 mV / 0.2 A = 5 mΩ, a DCIR at 10 ms.

Arbin

With 24-bit resolution, Arbin LBT systems resolve voltage differences well below 1 mV, so small amplitudes still give a clean result.

6.4Arbin Internal Resistance Step versus IEC 61960

Both methods follow the same principle, R = ΔV / ΔI, but they measure different quantities and serve different purposes.

Table 6. Comparison of the Arbin Internal resistance step and the IEC 61960 procedure

Arbin Internal resistance stepIEC 61960 procedure
Current sequenceSymmetric pulses around I0, repeated 10 timesOne step at 0.2 It, then one step at 1.0 It
Current directionCharge and discharge (I0 = 0), or one direction with I0 > IIRDischarge only
TimingHalf-cycles of 1 ms to 1000 ms10 s followed by 1 s
Net chargeZero when I0 = 0Small discharge
ResultDCIR at T1, close to R0 for short pulsesDCIR including more polarization
Typical useFast, low-disturbance tracking of aging and cell screeningStandardized values for specifications and comparisons
Do not mix the two

The Internal resistance step is not the IEC 61960 procedure, and its results should not be compared directly with IEC values. When an IEC 61960 measurement [5] is required, it can be programmed on any Arbin system with the two consecutive constant-current discharge steps described in section 5.

7Summary

Internal resistance is not a single number: it combines ohmic, SEI, charge-transfer and diffusion contributions that appear on different timescales, so every value must be reported with its measurement method and conditions.

Arbin systems support both approaches covered in this note. The built-in Internal resistance step provides fast, averaged measurements with zero net charge — ideal for tracking aging and screening cells — while standard constant-current steps allow fully IEC 61960-compliant DC resistance measurements for specifications and comparisons.

24-bit
Voltage and current resolution
±0.02%
Measurement accuracy
±0.01%
Measurement precision
1 kHz
Standard logging rate
10 kHz
Burst mode (0.1 ms)
1–1000 ms
IR pulse half-cycle

For more information or training on internal resistance measurements with Arbin systems, contact [email protected] or +1 979 690 2751, or see the Arbin cell tester range.

References

  1. [1]H.-G. Schweiger, O. Obeidi, O. Komesker, A. Raschke, M. Schiemann, C. Zehner, M. Gehnen, M. Keller and P. Birke, “Comparison of Several Methods for Determining the Internal Resistance of Lithium Ion Cells,” Sensors, vol. 10, no. 6, pp. 5604–5625, 2010. doi:10.3390/s100605604
  2. [2]J. Vetter, P. Novák, M. R. Wagner, C. Veit, K.-C. Möller, J. O. Besenhard, M. Winter, M. Wohlfahrt-Mehrens, C. Vogler and A. Hammouche, “Ageing mechanisms in lithium-ion batteries,” Journal of Power Sources, vol. 147, no. 1–2, pp. 269–281, 2005. doi:10.1016/j.jpowsour.2005.01.006
  3. [3]G. L. Plett, Battery Management Systems, Volume I: Battery Modeling. Norwood, MA: Artech House, 2015.
  4. [4]E. Barsoukov and J. R. Macdonald (eds.), Impedance Spectroscopy: Theory, Experiment, and Applications, 3rd ed. Hoboken, NJ: Wiley, 2018.
  5. [5]IEC 61960-3:2017, Secondary cells and batteries containing alkaline or other non-acid electrolytes – Secondary lithium cells and batteries for portable applications – Part 3: Prismatic and cylindrical lithium secondary cells and batteries made from them. Geneva: International Electrotechnical Commission, 2017.
  6. [6]U.S. Department of Energy, FreedomCAR Battery Test Manual for Power-Assist Hybrid Electric Vehicles, October 2003.
  7. [7]Arbin Instruments, “Battery Cell Grading and Matching,” Application Note AN-025, 2026. Read the note
Arbin LBT benchtop battery cycler

Systems in this note

Arbin LBT Cell Testers

4-wire Kelvin sensing as standard, 24-bit measurement, ±0.02% accuracy and ±0.01% precision, 1 kHz standard logging with a 10 kHz burst mode, and a dedicated Internal resistance control step — all on the MITS platform.

Measuring resistance on your cells?

Tell us your cell format, capacity and the standard you need to meet. An applications engineer will recommend a system and a schedule.

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